Low temperature conductivity of doped semiconductors: Mass anisotropy and intervalley effects
- 31 December 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 48 (9) , 755-759
- https://doi.org/10.1016/0038-1098(83)91011-6
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Magnetoresistance of weakly disordered electronsPhysical Review B, 1982
- Temperature-dependent conductivity of metallic doped semiconductorsPhysical Review B, 1982
- Low-Temperature Magnetoresistance of a Disordered MetalPhysical Review Letters, 1981
- Effects of Mutual Interactions in Weakly Localized Regime of Disordered Two-Dimensional Systems. II. Intervalley Impurity ScatteringJournal of the Physics Society Japan, 1981
- Effects of Mutual Interactions in Weakly Localized Regime of Disordered Two-Dimensional Systems. I. Magnetoresistance and Spin-SusceptibilityJournal of the Physics Society Japan, 1981
- Conductivity Cusp in a Disordered MetalPhysical Review Letters, 1981
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Theory of Negative Magnetoresistance I. Application to Heavily Doped SemiconductorsJournal of the Physics Society Japan, 1980
- Interaction Effects in Disordered Fermi Systems in Two DimensionsPhysical Review Letters, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979