A uniaxial stress apparatus for single-crystal X-ray diffraction on a four-circle diffractometer: application to silicon and diamond
- 1 April 1982
- journal article
- research article
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 15 (2) , 148-153
- https://doi.org/10.1107/s0021889882011698
Abstract
An apparatus for applying uniaxial stress to a single-crystal has been constructed. The stress is produced by turning a differential screw and is measured by a strain gauge. The device fits on a goniometer of a four-circle diffractometer and can rotate around all three axes of the goniometer without restrictions. The lattice constants of Si stressed along [111] were measured and compared with ultrasonically measured elastic constants. The internal stress parameter ξ was calculated from changes of the intensity of the 600 reflection: ξ = 0.74 ± 0.04, larger than the value generally accepted (ξ = 0.64 ± 0.04). The implications of this unexpected result are discussed.Keywords
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