Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy
- 1 August 1994
- journal article
- letter
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (5) , 607-609
- https://doi.org/10.1063/1.112246
Abstract
An Se‐passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6‐nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double‐layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3‐like structure with ordered 1/3 ML Ga vacancies was proposed.Keywords
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