Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 18O flux

1 July 1989

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 7 (4) , 2532-2536
https://doi.org/10.1116/1.575792

Abstract

Different experimental factors which influence the determination of oxygen content in Alx Ga1−x As semiconductor layers by secondary ion mass spectroscopy (SIMS) are described. The technique used involves flooding the sample surface with 18 O during profiling and corrects for errors due to oxygen adsorption on the sample surface during the analysis. Quantitative values for 16O content are obtained by comparison with implanted standards, taking into account corrections for changes in Al content and/or erosion rate. Simple tests allowing to check the analysis for charging effects and for internal consistency are illustrated. The results show that O concentrations down to the 4×1017 cm−3 level can be reliably determined.

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