Coulomb gap in disordered systems: computer simulation
- 28 March 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (6) , 1023-1034
- https://doi.org/10.1088/0022-3719/12/6/015
Abstract
The density of states (DS) of a disordered system with localised electronic states is studied in the vicinity of the Fermi level with the Monte-Carlo computer simulation for the two- and three-dimensional simple model. The minimisation of the total energy with respect to all one-electron transitions is shown to be a good approximation both for the total energy and for the DS. The electron-electron interaction drastically changes the DS in the vicinity of the Fermi level. The DS is shown to have a 'soft' Coulomb gap, and the self-consistent equation fits the results of simulation well. The finite size effect is also studied.Keywords
This publication has 12 references indexed in Scilit:
- Coulomb gap in a disordered semiconductorPhysica Status Solidi (b), 1977
- Comment on correlation effects in hopping conductionPhilosophical Magazine, 1977
- The effect of electron interaction on variable-range hoppingPhilosophical Magazine, 1976
- Coulomb gap in disordered systemsJournal of Physics C: Solid State Physics, 1976
- Coulomb gap and low-temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Effects of Coulomb Correlation on Hopping Conduction in Disordered SystemsProgress of Theoretical Physics Supplement, 1975
- Correlation effects in hopping conduction: A treatment in terms of multielectron transitionsPhysical Review B, 1974
- Correlation effects in hopping conduction: Hopping as a multi-electron transitionJournal of Non-Crystalline Solids, 1972
- Effect of carrier-carrier interactions on some transport properties in disordered semiconductorsDiscussions of the Faraday Society, 1970