Low-Temperature Impurity Conduction inn-Type Silicon

Hall coefficients and electrical resistivities were measured down to liquid helium temperatures for silicon specimens containing about ${10}^{17}$ phosphorus impurities per ${\mathrm{cm}}^3$ and about ${10}^{15}$ boron impurities per ${\mathrm{cm}}^3$. The density of minority impurities was determined during the preparation of the ingots, rather than deduced from the electrical measurements themselves. The results are extremely sensitive to the density of minority impurities. They are discussed in relationship to the theories of Conwell, Mott, and Price.