Performance characteristics of (InAs) 1 /(GaAs) n short-period superlattice quantum-well laser

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Abstract
The performance characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analysed both experimentally and theoretically. The measured threshold current density depends strongly on the number of periods in the superlattice structure. The radiative recombination rate and the gain against carrier density relationship in monolayer superlattice structures are calculated. The calculated threshold current density agrees well with the measured data. Laser emission has been observed at 1.23 μm using an (InAs)1/(GaAs)1 superlattice active region.

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