Electrical properties of luminescent porous silicon
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 293-299
- https://doi.org/10.1016/0022-2313(93)90147-f
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 14 references indexed in Scilit:
- Mechanisms of visible-light emission from electro-oxidized porous siliconPhysical Review B, 1992
- Visible Photoluminescence of Porous Si and Its Related Optical PropertiesJapanese Journal of Applied Physics, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Efficient Visible Photoluminescence from Porous SiliconJapanese Journal of Applied Physics, 1991
- Characterization Studies of p‐Type Porous Si and Its Photoelectrochemical ActivationJournal of the Electrochemical Society, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Photoelectrochemical Effects of Surface Modification of n‐Type Si with Porous LayerJournal of the Electrochemical Society, 1991
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- The temperature dependence f photoconductivity in a-SiJournal of Non-Crystalline Solids, 1974
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970