High density CID imagers
- 1 February 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (2) , 79-84
- https://doi.org/10.1109/T-ED.1978.19042
Abstract
The fabrication and performance of large (16K, 60K, and 78K cells) high density CID self-scanned imager arrays is described. Array fabrication used overlapping electrodes of two levels of polysilicon or a first level of polysilicon and a second level of antimony tin oxide. Yield considerations and the special processing steps required to fabricate these large chips are examined. Quantum efficiency curves of these structures are compared.Keywords
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