Aging of the light-current characteristics of proton-bombarded AlGaAs lasers operated at 30°C in pulsed conditions
- 1 January 1981
- proceedings article
- Published by Optica Publishing Group
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- (Al,Ga) As Double-Heterostructure Lasers: Comparison of Devices Fabricated with Deep and Shallow Proton BombardmentBell System Technical Journal, 1980
- Current Directions in GaAs Laser Device DevelopmentBell System Technical Journal, 1980
- The effect of substrate temperature on the current threshold of GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- Atlanta Fiber System Experiment: GaAIAs Laser Transmitter for Lightwave Transmission SystemsBell System Technical Journal, 1978
- Capacitance spectroscopy studies of degraded AlxGa1−xAs DH stripe-geometry lasersJournal of Applied Physics, 1976