Ion mixing of Ni–Pt films on Si
- 1 April 1986
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 1 (2) , 322-326
- https://doi.org/10.1557/jmr.1986.0322
Abstract
The reactions between bilayered Ni/Pt films and Si (100) substrates induced by thermal annealing and ion mixing were investigated. Thermal annealing of Si/Pt/Ni and Si/Ni/Pt samples led to layer reversal at low temperatures (∼ 300°to 400°C) and the formation of a ternary phase at high temperatures (∼ 700°C). These results are consistent with those reported in the literature. Ion mixing of both types of samples led to silicide formation without layer reversal. This effect is interpreted in terms of a change of moving species from metal (in thermal annealing) to Si (in ion mixing). The mixing efficiency between Pt and Ni is observed to be enhanced when Si is mixed together with these two metals.Keywords
This publication has 3 references indexed in Scilit:
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- Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixingJournal of Applied Physics, 1985
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