Secondary Electron Emission from Ion-Implanted Silicon
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4) , 1996-1998
- https://doi.org/10.1063/1.1661433
Abstract
A number of single‐crystal p‐type Si samples were implanted with Cs+ ions to various concentrations and depths. The secondary electron emission coefficient δ of these samples was found to be as much as 28% higher than for untreated Si samples. In particular, the low value of primary voltage needed to obtain δ>1 suggests the use of such emitters in applications where secondary emission buildup at low primary voltages is desired.This publication has 3 references indexed in Scilit:
- Analysis of Rb and Cs implantations in silicon by channeling and hall effect measurementsSolid-State Electronics, 1970
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Silicon heavily doped by energetic cesium ionsJournal of Physics and Chemistry of Solids, 1963