Inverse photoemission from semiconductors
- 1 January 1990
- journal article
- Published by Elsevier in Surface Science Reports
- Vol. 12 (1) , 3-48
- https://doi.org/10.1016/0167-5729(90)90005-x
Abstract
No abstract availableKeywords
This publication has 271 references indexed in Scilit:
- Electronic structure and bonding properties in TiSi2Zeitschrift für Physik B Condensed Matter, 1990
- Giant quasi-particle shifts of semiconductor surface statesJournal of Physics: Condensed Matter, 1989
- Optical properties and atomic structure of cleaved silicon and germanium (111) surfacesSurface Science Reports, 1986
- Normal incidence grating spectrometer designed for inverse photoemission studies in the range 10–30 eVReview of Scientific Instruments, 1986
- Possible highT c superconductivity in the Ba?La?Cu?O systemZeitschrift für Physik B Condensed Matter, 1986
- Electronic structure of cerium and light rare-earth intermetallicsAdvances in Physics, 1986
- Normal-incidence grating spectrograph with large acceptance for inverse photoemissionReview of Scientific Instruments, 1985
- Study of III–V semiconductor band structure by synchrotron photoemissionPhysica B+C, 1983
- Unoccupied electronic states in graphitePhysical Review B, 1982
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982