Microwave analysis of AlGaAs/InGaAs HEMT using Monte Carlo simulation
- 27 February 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (5) , 458-460
- https://doi.org/10.1049/el:19920289
Abstract
The current gain of an intrinsic HEMT is determined as function of frequency using small-signal Monte Carlo simulations. The fr obtained is in good agreement with the value derived from steady-state results by fr = gm/2πCG. A set of Z parameters is also calculated and an equivalent circuit model is deduced.Keywords
This publication has 1 reference indexed in Scilit:
- Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMTPublished by Springer Nature ,1986