Hall factor for ionized impurity scattering
- 15 August 1995
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (4) , 2846-2847
- https://doi.org/10.1063/1.360085
Abstract
We propose an interpolation formula which describes the dependence of the Hall factor for impurity scattering in semiconductors on the carrier concentration and temperature with sufficient accuracy for practical calculations. This formula applies to semiconductors with an arbitrary degree of degeneracy which makes it especially useful for the interpretation of the measured temperature dependencies of a Hall mobility.This publication has 1 reference indexed in Scilit:
- The Hall Effect in SemiconductorsProceedings of the Physical Society. Section B, 1956