Electron tunnelling of GaAs-Pb junctions under high pressure
- 1 January 1978
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 39 (22) , 443-446
- https://doi.org/10.1051/jphyslet:019780039022044300
Abstract
The conduction band distortion and LO phonon energy of GaAs, the transition temperature, the energy gap and the phonon energies in superconducting lead film, have been measured at pressures up to 30 kbar by electron tunnelling through Schottky barriersKeywords
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