Effect of surface irradiation, substrate temperature, and annealing on laser deposited silicon dioxide
- 1 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (9) , 979-981
- https://doi.org/10.1063/1.95471
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Laser-induced chemical vapor deposition of SiO2Applied Physics Letters, 1982
- Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 MixtureJournal of the Electrochemical Society, 1981
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- Hydrogen in semi-insulating polycrystalline silicon filmsJournal of Applied Physics, 1980
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977