Isochronal annealing ofpandn-type silicon irradiated at 80°K

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Abstract
Hall effect and electrical resistivity measurements are reported following isochronal annealing in the range 90°K to 700°K, for silicon doped with boron or phosphorus. Results are presented for samples irradiated at 80°K with either 2 Mev electrons or reactor neutrons. A strong dependence of the annealing spectra on the type of irradiating particle is noted. Comparison of the results with e.p.r. and other data from the literature allows an identification of many of the annealing stages observed. The energy level of the neutral vacancy in silicon is concluded to be very close to the valence band edge. Activation energies and orders of reaction of a number of well-resolved annealing stages are discussed.