An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond
- 25 June 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 μm CMOS technology and beyondIEEE Electron Device Letters, 2001
- Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuitIEEE Electron Device Letters, 2000