MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well Heterostructures
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9A) , L574
- https://doi.org/10.1143/jjap.21.l574
Abstract
Ga1-x Al x As–GaAs quantum wells are grown by MOVPE. Wells as narrow as 25 Å are made. Interface quality in relation to alloy clustering and abruptness in change of Al-content are characterized with the aid of luminescence spectrum measurements. A remarkable agreement is found between the experimental n=1 electron to heavy hole transition energies and those which are calculated with the simple rectangular well model. The results indicate that the Al-content changes at the interfaces over less than one unit cell.Keywords
This publication has 3 references indexed in Scilit:
- Al-Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxyApplied Physics Letters, 1981
- High-energy (Visible-red) stimulated emission in GaAsJournal of Applied Physics, 1981
- Alloy Clustering in-GaAs Quantum-Well HeterostructuresPhysical Review Letters, 1980