Effect of gain saturation on injection laser switching
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6) , 3858-3860
- https://doi.org/10.1063/1.326510
Abstract
Gain saturation is introduced into the laser‐coupled rate equations. Numerical and analytical solutions show considerable damping of relaxation oscillations for small amounts of saturation.This publication has 18 references indexed in Scilit:
- GaAs/GaAlAs diode lasers with angled pumping stripesIEEE Journal of Quantum Electronics, 1978
- Curved stripe GaAs : GaAlAs diode lasers and waveguidesApplied Physics Letters, 1978
- Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structureIEEE Journal of Quantum Electronics, 1978
- Modulation behavior of semiconductor injection lasersApplied Physics A, 1977
- Dynamic properties of transverse junction stripe lasersIEEE Journal of Quantum Electronics, 1977
- Unstable horizontal transverse modes and their stabilization with a new stripe structureIEEE Journal of Quantum Electronics, 1977
- Lasing Characteristics of Very Narrow Planar Stripe LasersJapanese Journal of Applied Physics, 1977
- Dynamic Behavior of Buried Heterostructure LaserJapanese Journal of Applied Physics, 1976
- Dynamic behaviour of semiconductor lasersElectronics Letters, 1975
- Behavior of threshold current and polarization of stimulated emission of GaAs injection lasers under uniaxial stressIEEE Journal of Quantum Electronics, 1973