Diffusion of Cd And Zn In InP between 550 and 650°C
- 1 January 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (1) , 37-52
- https://doi.org/10.1007/bf02654607
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Control of Zn Doping for Growth of InP pn Junction by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1980
- Formation of p+-p−-n− junctions in InP by Cd diffusionApplied Physics Letters, 1980
- Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductorsApplied Physics Letters, 1979
- Planar Zn diffusion in InPSolid-State Electronics, 1978
- Electrical measurements on homogeneous diffused p-type InPJournal of Physics D: Applied Physics, 1977
- Diffusion profiles of zinc in indium phosphideJournal of Physics D: Applied Physics, 1975
- Diffusion of zinc in indium phosphide at 700°CSolid-State Electronics, 1974
- Zinc Diffusion into Gallium Phosphide under High and Low Phosphorus OverpressureJournal of the Electrochemical Society, 1969
- The junction depth of concentration-dependent diffusion. Zinc in III–V compoundsSolid-State Electronics, 1964
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964