Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques
- 1 June 1985
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 63 (6) , 732-735
- https://doi.org/10.1139/p85-116
Abstract
Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.Keywords
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