Electrical Characterization of 6H‐SiC Metal Oxide Semiconductor Structures at High Temperature

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Abstract
Capacitance‐voltage (C‐V) characteristics of (n‐type, Si face, and C face) metal‐oxide‐semiconductor structures have been studied at temperatures of 25, 100, 200, 300 and 350°C. Wet oxidation was used to grow a layer of of 440 and 800 Å thickness on the Si‐ and C‐face of 6H‐SiC, respectively. The characteristics of SiC MOS capacitor at 350°C for Si‐face and at 200°C and above for the C‐face, resemble silicon MOS structure at room temperature. An analysis of C‐V curves shows that as the measurements temperature increases the curves shift toward the right for the Si‐face and toward the left for the C face. Repeated measurements of sample show that C‐V curves measured at 350°C remain the same in both the C and Si face, whereas C‐V curves at room temperature shift toward right, especially after first cycle of high‐temperature measurements on the Si face. No apparent shift is visible at room temperature for the C face.

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