A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+
- 1 October 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3760-3762
- https://doi.org/10.1063/1.341381
Abstract
We describe a new secondary ion mass spectrometry technique for compositional analysis of matrix elements. It consists of detecting the molecular ions CsM+ rather than M± ions (M is the matrix element to be analyzed) under Cs+ primary ion bombardment. The linear behavior of the CsM+ ion yield makes the analysis independent of the matrix effect. An application to in‐depth quantitative compositional analysis for AlGaAs/GaAs multilayer structures is given. The compositions were determined with an absolute accuracy better than 2% and the depth resolution was smaller than 100 Å.This publication has 2 references indexed in Scilit:
- Quantitative analysis and depth profiling of rare gases in solids by secondary-ion mass spectrometry: Detection of (CsR)+ molecular ions (R=rare gas)Journal of Vacuum Science & Technology A, 1988
- Quantitative analysis using sputtered neutrals in a secondary ion microanalyserNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986