Phonon-assisted optical transitions in GaN with impurities and defects
- 1 January 2001
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 302-303, 291-298
- https://doi.org/10.1016/s0921-4526(01)00443-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Bound-state symmetries and optical transitions in GaAs/AlAs quantum wells and superlattices with impurities and defectsPhysical Review B, 2000
- Optical Selection Rules for Hexagonal GaNPhysica Status Solidi (b), 1999
- Selection Rules for Optical Transitions Involving Impurities and Defects in Hexagonal GaNPhysica Status Solidi (b), 1998
- Phonon dispersion and Raman scattering in hexagonal GaN and AlNPhysical Review B, 1998
- Phonon replicas associated with donor–bound–excitons in GaNSolid State Communications, 1998
- Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphireMaterials Science and Engineering: B, 1997
- Electron state symmetries and optical transitions in semiconductor superlattices: I. grown along the [001] directionJournal of Physics: Condensed Matter, 1997
- Electron state symmetries and optical transitions in semiconductor superlattices: II. grown along the [110] and [111] directionsJournal of Physics: Condensed Matter, 1997
- Site Symmetry in CrystalsPublished by Springer Nature ,1993