Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristics
- 1 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 336-346
- https://doi.org/10.1016/0039-6028(86)90863-0
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
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