Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS
- 1 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 25-30
- https://doi.org/10.1016/s0167-9317(99)00330-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The electronic structure at the atomic scale of ultrathin gate oxidesNature, 1999
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996
- Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variationIEEE Transactions on Electron Devices, 1996