A NEW APPROACH TO IDEAL AlGaAs MQW SOLAR CELLS

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Abstract
A theoretical model has been developed which shows that the insertion of multi-quantum wells into the depletion region of a p-i(MQW)-n Al x Ga 1-x As solar cell can significantly enhance the conversion efficiencies. Open-circuit voltages, short-circuit current densities, I-V curves and conversion efficiencies have been calculated as functions of the well and barrier band gaps, width and depth of the wells, number of wells in the intrinsic region and the recombination rate in the interfaces. Particular emphasis is placed on calculation of absorption of the Al x Ga 1-x As quantum wells. These results are matched with p-i-n solar cells which are identical in all respects except that they do not have quantum wells. We demonstrated that for determined values of the studied parameters the conversion efficiencies of the quantum well solar cell is higher to corresponding cell without quantum wells.

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