Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C

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Abstract
Silicon carbide has been grown at 1100 to 1400 °C by chemical vapor deposition using CH3SiCl3 and H2 gaseous mixture onto a graphite substrate. The effect of deposition temperature, total system pressure, and the CH3SiCl3 input fraction on growth characteristics and structure of deposits has been studied. The experimental results show that the SiC deposition reaction is a thermally activated process with the deposition rate limited by surface reactions. The apparent activation energy is about 26 kcal/mol at a system pressure of 200 Torr and decreases with the increasing total system pressure. In this experiment, polycrystalline β-SiC always has been deposited. The preferred orientation of the deposited SiC films changes from 〈111〉 to 〈220〉 with increasing deposition temperature. The size of the polycrystalline β-SiC grains becomes coarser as the deposition temperature and the CH3SiCl3 input fraction are increased.

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