Ballistic electron emission microscopy, current transport, and p-type δ doping control of n-isotype InAs–GaAs heterojunctions
- 1 July 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (4) , 2219-2224
- https://doi.org/10.1116/1.585768
Abstract
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