Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111)A—(100)—(111)B
- 1 January 1971
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 6 (5) , 607-622
- https://doi.org/10.1002/crat.19710060505
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The Effect of Orientation on the Electrical Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1964
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964
- The spiral growth of crystalsUspekhi Fizicheskih Nauk, 1961
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951