Depth distributions and range parameters for elements implanted into single-crystal diamonds and chemically vapor-deposited polycrystal diamond films
- 31 August 1991
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 47 (1-3) , 559-571
- https://doi.org/10.1016/0257-8972(91)90326-r
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Volume expansion of ion-implanted diamondApplied Physics Letters, 1981
- Radiation damage and annealing in Sb implanted diamondRadiation Effects, 1980
- The pearson IV distribution and its application to ion implanted depth profilesRadiation Effects, 1980
- Ion implantation into diamondRadiation Effects, 1978