New method for determining the series resistances in a MESFET or TEGFET
- 18 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (17) , 702-703
- https://doi.org/10.1049/el:19830478
Abstract
The forward characteristic of the Schottky gate is generally used in a MESFET (or TEGFET) to measure the source or gate series resistances. An original model describing the FET behaviour when a high current flows through the gate is presented. From this model we deduce simple methods for determination of parasitic resistances.Keywords
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