Integration of low temperature Si processing steps using interconnected ultra‐high (UHV) systems addresses two concerns of the semiconductor industry, low temperature processing and control of wafer environment between processing steps. We report results from a single remote plasma enhanced chemical vapor deposition (RPECVD) reactor with UHV capability. In situ surface preparations using a 300°C hydrogen plasma treatment have been successful in reconstructing Si(100) surfaces. SiO2 layers deposited on these surfaces at 250°C have resulted in MOS capacitors with minimum interface state densities of 1.8×101 0 cm− 2 eV− 1. Homoepitaxial Si epitaxy originally nucleated at 520°C renucleated for growth temperatures as low at 235°C. This work clearly demonstrates the versatility and potential for the RPECVD process to become a member of a low temperature, integrated silicon processing facility.