Modeling of illumination effects on resist profiles in x-ray lithography
- 1 August 1991
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1465, 244-253
- https://doi.org/10.1117/12.47361
Abstract
Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring x-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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