Constructing band diagrams of semiconductor heterojunctions
- 23 January 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (4) , 457-459
- https://doi.org/10.1063/1.114055
Abstract
A novel approach for constructing the band diagrams of semiconductor heterojunctions is discussed and illustrated. It is based on a simple measurement of band discontinuities, Debye length and the width of the space–charge region at the heterojunction interface. Monitoring the changes in the surface potential during heterojunction formation makes it possible to identify the contributions of the interface states and dipole. The approach is illustrated by the results of experiments performed on the InP/In2O3 heterojunction.Keywords
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