Ultraviolet-light-enhanced reaction of oxygen with gallium arsenide surfaces
- 1 May 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 6 (3) , 754-756
- https://doi.org/10.1116/1.575101
Abstract
Light-enhanced reaction of oxygen with gallium arsenide surfaces by irradiation with deep-UV, near-UV, and visible light was studied using Auger electron spectroscopy and x-ray photoelectron spectroscopy for submonolayer and above monolayer regimes, respectively. The onset of a strong wavelength dependence of the enhanced oxidation was observed after the oxygen coverage reached more than one-half a monolayer. An abrupt threshold for this wavelength dependence was also observed at ∼4.1-eV photon energy. A possible mechanism is presented to explain this strong wavelength dependence.Keywords
This publication has 0 references indexed in Scilit: