Theory of Electron Multiplication in Silicon
- 1 February 1956
- journal article
- Published by Oxford University Press (OUP) in Progress of Theoretical Physics
- Vol. 15 (2) , 95-110
- https://doi.org/10.1143/ptp.15.95
Abstract
In the previous paper the conductivity of non-polar crystals in the strong electrostatic field was computed by the kinetic-statistical method. The impact ionization process, however, we neglected there. In the present paper the effect of the impact ionization process is also considered and the theory is extended to the case, where the distribution function depends on the velocity and the space-coordinate of the particles. The theory is applied to “the electron multiplication” in the p-n junction of Si, which was observed by McKay and McAfee.Keywords
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