Proton damage in GaAs solar cells
- 1 April 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (4) , 421-422
- https://doi.org/10.1109/t-ed.1984.21544
Abstract
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.Keywords
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