Deformation Occurring during the Deposition of Polycrystalline-Silicon Films

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Abstract
The deformation sometimes observed during the deposition of thick poly‐crystalline‐silicon films for dielectrically isolated integrated circuits has been investigated. The degradation of films deposited by the decomposition of di‐ chlorosilane, silane, or silicon tetrachloride in a hydrogen carrier gas has been observed to occur during the deposition rather than during the cooling cycle and to be more severe at lower deposition temperatures. This degradation has been related to the inclusion of trace quantities of gaseous contaminants, especially oxygen, in the structure of the film. The elimination of these contaminants from the deposition chamber allows the reproducible fabrication of high quality films.

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