Electrical and Optical Properties of the CuGa(S1-xSex)2 System
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3R)
- https://doi.org/10.1143/jjap.29.484
Abstract
The mixed crystal system CuGa(S1-x Se x )2 was prepared by the normal freezing method. The compositional dependence of the lattice constants and the optical band gap obeyed Vergard's law. The phase diagram of this system was studied by DTA measurement. An orange photoluminescence was observed for x≦0.5 after annealing in vacuum. It was confirmed that the emission was due to D-A pair recombinations, and an increase of S-vacancy caused an increase of photoluminescence intensity. The electrical resistivity was also affected by S-vacancy.Keywords
This publication has 12 references indexed in Scilit:
- Optical Characterization of Deep Levels in Single Crystals of CuGaS2 Grown by Chemical Vapor TransportJapanese Journal of Applied Physics, 1989
- Order-disorder transformation in ternary tetrahedral semiconductorsApplied Physics Letters, 1987
- Room temperature photoconductivity of CuGaSe2Journal of Physics and Chemistry of Solids, 1987
- Valence band structure of CuGa(S1−zSez)2 alloysCanadian Journal of Physics, 1986
- Photoluminescence Properties of CuGaSe2Grown by Iodine Vapour TransportJapanese Journal of Applied Physics, 1978
- Excitonic Structure of CuGaS2xSe2(1-x)and CuAlS2xSe2(1-x)Japanese Journal of Applied Physics, 1977
- Luminescence in CuGaS2−2xSe2x mixed crystals grown by chemical vapor transportJournal of Physics and Chemistry of Solids, 1977
- Ternary phase relations in the vicinity of chalcopyrite copper gallium sulfideJournal of Electronic Materials, 1976
- Preparation and some properties of materials in systems of the type MIMIIIS2MIMIIISe2 where MI = Cu, Ag and MIII = Al, Ga, InMaterials Research Bulletin, 1973
- Green electroluminescence from CdS–CuGaS2 heterodiodesApplied Physics Letters, 1973