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Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beam
Home
Publications
Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beam
Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beam
SS
S. Shimizu
S. Shimizu
OT
O. Tsukakoshi
O. Tsukakoshi
SK
S. Komiya
S. Komiya
YM
Y. Makita
Y. Makita
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1 March 1985
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 3
(2)
,
554-559
https://doi.org/10.1116/1.583177
Abstract
No abstract available
Cited
Cited by 16 articles
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