Novel Digital Photosensor Cell in GaAs IC Using Conversion of Light Intensity to Pulse Frequency
- 1 November 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (11R)
- https://doi.org/10.1143/jjap.32.5002
Abstract
A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF) (1-bit digital counter) and a reset (Rst) FET. This sensor cell has a wide dynamic range of over 5 decades of incident light power and a ? characteristic suitable for an image pickup device.Keywords
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