Abstract
A Monte Carlo analysis is made of site percolation on a diamond lattice occupied by a mixture of monatomic and diatomic constituents that is generated by an algorithm simulating the results of random incorporation during growth. This system models some features of the alloys of Ge with group III-V semiconductors. Extrapolation to infinite sample size gives percolation thresholds of 0.35 for both the diatomic and the monatomic constituent of the alloy. This is significantly less than the threshold value of 0.43 for percolation on a simply substituted diamond lattice.