Far IR luminescence of hot holes in Ge: Diagnostics of intersubband population inversion and effects of uniaxial stress
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 755-758
- https://doi.org/10.1016/0038-1101(88)90382-6
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectraPhilosophical Magazine, 1959