Bonding and ionicity in semiconductors
- 15 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (2) , 1032-1050
- https://doi.org/10.1103/physrevb.36.1032
Abstract
Theoretical investigations of the bonding properties of 34 elemental and compound semiconductors are reported. From self-consistent band-structure calculations (within the local-density approximation) valence charge densities are calculated. The densities are obtained by transforming muffin-tin orbitals to a localized basis. Using another representation, an orthogonal basis, we construct hybrids and project out the bond and antibond characters, i.e., we derive first-principles values for bond orders. These, together with the first-principles tight-binding parameters, are used to study chemical trends. Relations to Phillips ionicity () scale are established and it is demonstrated, for example, that the critical ionicity value =0.786 found empirically separating the fourfold- from the sixfold-coordinated crystal structures also follows from total-energy calculations.
Keywords
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