High-quality GaInAs photodiodes grown using tertiarybutylarsine by atmospheric-pressure MOVPE

9 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (23) , 1598-1600
https://doi.org/10.1049/el:19891073

Abstract

GaInAs was grown by atmospheric-pressure MOVPE using tertiarybutylarsine in place of arsine. Its carbon content was low and its carrier density and mobility were 2×10¹⁵cm^-3and 50,500 cm²/Vs at 77 K, respectively, comparable with arsine-grown GaInAs. The composition of the GalnAs was, however, sensitive to growth temperature, pin diodes grown from tertiarybutylarsine were comparable with those grown from arsine, having dark currents < 100 pA and capacitance about 0.30 pF.

Keywords

TERTIARYBUTYLARSINE
CAPACITANCE
PIN DIODES
GROWTH TEMPERATURE
CARRIER DENSITY
0.3 PF
DARK CURRENTS
GAINAS PHOTODIODES
100 PA
MOBILITY
ATMOSPHERIC-PRESSURE MOVPE

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