Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering

4 July 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (14) , 1241-1243
https://doi.org/10.1049/el:19910778

Abstract

Stripe-geometry strained InGaAs–GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 μm wide, 215 μm long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.

Keywords

ROOM TEMPERATURE CONTINUOUS OPERATION
2.2 MA
IMPURITY INDUCED DISORDERING
ELECTRICAL CONFINEMENT
STRAINED INGAAS-GAAS QUANTUM WELL LASERS
1.2 MICRON
THRESHOLD CURRENT
SMALL ACTIVE STRIPE WIDTH
STRIPE GEOMETRY LASERS
215 MICRON
ULTRALOW THRESHOLD
SEMICONDUCTORS
UNCOATED LASERS

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