ATOMIC STRUCTURE AND PROPERTIES OF EPITAXIAL THIN-FILM SEMICONDUCTOR INTERFACES

Publisher Website
Google Scholar
Abstract
Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides, the film growth and crystalline structure can be understood from the interface structure. We also report recent results on silicon based semiconductor superlattices

This publication has 0 references indexed in Scilit: